E-Beam Lithography System (JEOL JBX-8100FS)

Description

JBX-8100FS 100kV EBL tool capable of writing features as small as 5nm on wafers up to 200mm.

This electron beam pattern generator was installed at QMI in May 2018.

Main Specifications

• High brightness electron source (ZrO/W thermal field emitter).
• Electron optical column to form a 100keV beam.
• Current range 0.1nA to 200nA, minimum spot size 2nm.
• Maximum writing field size 1mm², scan deflector speed 125MHz.
• Dynamic focus and stigmation control across scan fields.
• Laser controlled stage, maximum travel range 170mm x 170mm.
• Substrate sizes from 5x5mm² to 8inch wafers can be accommodated.
• Automated mark detection, overlay accuracy <20nm.

For data preparation, including proximity correction, we offer access to the BEAMER software licensed by Genisys GmbH.

Contact: Matthias (matthias.kroug@ubc.ca)